silicon pin diodes high voltage pin diodes 12-18 vol. 1 sales offices: visit our web site at http://www.temex.com electrical characteristics this series of high power, high voltage pin diodes incorporates ceramic-glass passivated mesa technology. a broad range of products is available, in terms of breakdown voltages, junction capacitances and series resistances, to suit a large variety of applications, from 1 mhz to several ghz. these diodes are available in non-magnetic packages. silicon pin diodes for switching & phase shifting applications (medium & high power) pin gold dia per side min. typ. typ. max i f = 100 ma i f = 200 ma min. eh80050 0.13 0.6 500 550 0.15 0.20 0.70 0.65 1.1 eh80051 0.15 0.6 500 550 0.30 0.40 0.60 0.55 1.5 eh80052 0.25 0.8 500 550 0.60 0.70 0.40 0.30 2.0 eh80053 0.27 0.8 500 550 0.80 0.90 0.30 0.25 2.5 eh80055 0.34 0.9 500 550 1.2 1.3 0.25 0.22 3.0 eh80080 0.13 0.8 800 850 0.15 0.35 0.80 0.70 2.0 eh80083 0.27 0.9 800 850 0.80 0.90 0.40 0.30 3.0 eh80086 0.55 1.4 800 850 1.4 1.7 0.35 0.28 5.0 eh80100 0.23 0.9 1000 1100 0.30 0.40 0.70 0.60 3.0 eh80102 0.30 0.9 1000 1100 0.60 0.75 0.40 0.35 4.0 eh80106 0.55 1.4 1000 1100 1.40 1.70 0.35 0.30 7.0 v r = 100v i f = 200 ma i f = 300 ma eh80120 0.25 0.9 1200 1300 0.30 0.40 0.60 0.55 6.0 eh80124 0.65 1.5 h (2) 1200 1300 1.00 1.20 0.45 0.35 10.0 eh80126 0.75 1.7 h (2) 1200 1300 1.40 1.70 0.40 0.30 12.0 eh80129 1.25 2.2 1200 1300 2.00 2.30 0.30 0.25 15.0 eh80154 0.65 1.5 1500 1600 1.00 1.20 0.45 0.35 10.0 eh80159 1.25 2.2 1500 1600 2.00 2.30 0.30 0.25 15.0 v r = 200v i f = 200 ma i f = 300 ma eh80182 0.75 1.5 1800 1900 0.60 0.80 0.60 0.50 12.0 eh80189 1.4 2.6 h (2) 1800 1900 2.00 2.40 0.35 0.30 18.0 eh80204 0.85 1.7 2000 2100 1.00 1.30 0.50 0.40 14.0 eh80209 1.4 2.6 h (2) 2000 2100 2.00 2.40 0.35 0.30 18.0 eh80210 1.5 3 h (2) 2000 2100 3.00 3.40 0.20 0.15 25.0 description (1) other capacitance values available on request (2) hexagonal chips (between opposite ?ts) characteristics chip applicable break- junction forward series minority at 25? dimensions voltage down capacitance resistance carrier v r v br c j (1) r sf lifetime i test conditions n/a i < 10? i < 10? v r = 50 v f = 120 mhz i f =10ma f = 1 mhz i f as shown i r = 6ma type mm typ. v v pf ? max s chip and packaged diodes chip diodes
12-19 vol. 1 sales offices: visit our web site at http://www.temex.com silicon pin diodes high voltage pin diodes pin shunt isolated stud flat mounted max mhz w dh80050 f 27d bh301 bh202n 20.0 50 - 20000 50 dh80051 f 27d bh301 bh202n 18.0 30 - 15000 80 dh80052 f 27d bh301 bh202n 15.0 20 - 10000 100 dh80053 f 27d bh301 bh202n 12.0 20 - 3000 100 dh80055 f 27d bh301 bh202n 10.0 10 - 1000 250 dh80080 f 27d bh301 bh202n 18.0 50 - 20000 60 dh80083 f 27d bh301 bh202n 12.0 20 - 10000 80 dh80086 bh35 bh301 bh202n 8.0 10 - 500 200 dh80100 f 27d bh301 bh202n 15.0 20 - 10000 80 dh80102 f 27d bh301 bh202n 12.0 20 - 3000 100 dh80106 bh35 bh300 bh202n 5.5 10 - 500 500 dh80120 f 27d bh301 bh202n 15.0 10 - 8000 100 dh80124 bh35 bh300 bh200 8.0 10 - 2000 250 dh80126 bh35 bh300 bh200 6.0 10 - 500 500 dh80129 bh141 bh300 bh200 4.5 5 - 200 1000 dh80154 bh141 bh300 bh200 8.0 10 - 2000 250 dh80159 bh141 bh300 bh200 4.5 5 - 200 1000 dh80182 bh35 bh300 bh200 10 10 - 50 dh80189 bh141 bh300 bh200 4.5 15 - 200 1000 dh80204 bh141 bh300 bh200 8.0 10 - 1000 250 dh80209 bh141 bh300 bh200 4.5 1.5 - 200 1000 dh80210 bh141 bh300 bh200 2.5 1.5 - 50 1000 (3)custom cases available on request (4) r th is measured in a standard shunt case, grounded on an intnite heatsink temperature ranges: operating junction (t j ): -55? c to +175? c storage: -65? c to +200? c ?c/w frequency power thermal typical operating resistance conditions r th (4) vswr < 1.5 p diss = 1 w z 0 = 50 ?
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